Robert Hall

Robert N. Hall, scientist at the General Electric Research Laboratory, developed a new method of growing silicon crystals for transistors. With his 'meltback' process, transistors will have greatly improved frequency range as indicated on the blackboard in the background and will be useful in television, radar, shortwave radio, and other electronic devices where high-frequency requirements have previously called for bulkier vacuum tubes. Dr. Hall is shown holding one of the transistors. The tiny silicon crystal, barely discernible at the top junction of the wires above the supporting element, contains a center layer of material only 1/5000th of an inch thick., Credit Line: General Electric Research and Development Center, courtesy AIP Emilio Segrè Visual Archives
Abstract/Description: Robert N. Hall, scientist at the General Electric Research Laboratory, developed a new method of growing silicon crystals for transistors. With his 'meltback' process, transistors will have greatly improved frequency range as indicated on the blackboard in the background and will be useful in television, radar, shortwave radio, and other electronic devices where high-frequency requirements have previously called for bulkier vacuum tubes. Dr. Hall is shown holding one of the transistors. The tiny silicon crystal, barely discernible at the top junction of the wires above the supporting element, contains a center layer of material only 1/5000th of an inch thick.
Subject(s): Eyeglasses
Blackboards
Diagrams
Crystals
Transistors
Signal theory (Telecommunication)
Vacuum-tubes
Portraits
Hall, Robert Noel,1919-
Credit Line: General Electric Research and Development Center, courtesy AIP Emilio Segrè Visual Archives
Catalog ID: Hall Robert Noel B1